N-Channel MOSFET. SI3434 Datasheet

SI3434 MOSFET. Datasheet pdf. Equivalent

Part SI3434
Description N-Channel MOSFET
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
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SI3434
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI3434
Features
High dense cell design for extremely low RDS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Marking Code: R34
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed (note 1)
Gate-source Voltage
Thermal Resistance Junction
to Ambient (note 2)
Operating Junction Temperature
Storage Temperature
Rating
30
5.0
20
f10
417
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
к/W
к
к
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.104
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 4
2014/12/08



SI3434
SI3434
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage(note 3)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Drain-source on-resistance (note 3) RDS(on)
Forward tranconductance (note 3)
gFS
Diode forward voltage (note 3)
VSD
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING PARAMETERS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Test Condition
VGS = 0V, ID =250µA
VDS =30V,VGS = 0V
VGS =±10V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =5A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4A
VDS =5V, ID =4A
IS=1A, VGS = 0V
VDS =15V,VGS =0V,f =1MHz
VDD=15V,VGS=10V
RL=3.75,RGEN=3
VDS =15V,VGS =10V,ID=4A
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width300µs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
MCC
TM
Micro Commercial Components
Min Typ Max Unit
30
V
1
µA
±10 µA
0.6
1
V
42
m
44
m
50
m
15
S
1
V
245
pF
35
pF
20
pF
2
ns
3.5
ns
22
ns
3.5
ns
10
nC
0.5
nC
1
nC
Revision: A
www.mccsemi.com
2 of 4
2014/12/08







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