N-Channel MOSFET. 20N06 Datasheet

20N06 MOSFET. Datasheet pdf. Equivalent

Part 20N06
Description N-Channel MOSFET
Feature NTD20N06, NTDV20N06 MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high spee.
Manufacture ON Semiconductor
Datasheet
Download 20N06 Datasheet




20N06
NTD20N06, NTDV20N06
MOSFET – Power,
N-Channel, DPAK
20 A, 60 V
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Lower and Tighter VSD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
NTDV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 10 MW)
GatetoSource Voltage
Continuous
Nonrepetitive (tpv10 ms)
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
±20
±30
20
10
60
60
0.40
1.88
1.36
55 to
175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
170 mJ
°C/W
2.5
80
110
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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V(BR)DSS
60 V
RDS(on) TYP
37.5 mW
ID MAX
20 A
NChannel
D
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
1
Gate
2
Drain
3
Source
A
20N06
Y
WW
G
= Assembly Location*
= Device Code
= Year
= Work Week
= PbFree Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
May, 2019 Rev. 10
Publication Order Number:
NTD20N06/D



20N06
NTD20N06, NTDV20N06
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
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2







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