N-Channel MOSFET. SI3134K Datasheet

SI3134K MOSFET. Datasheet pdf. Equivalent

Part SI3134K
Description N-Channel MOSFET
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SI3134K Datasheet




SI3134K
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI3134K
Features
Lead Free Product is Acquired
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Operated at Low Logic Level Gate Drive
N-Channel Switch with Low RDS(on)
Surface Mount Package
Marking : KF
Absolute maximum ratings @ 25ć
Symbol Parameter
VDS
Drain-source Voltage
VGS
Gate-source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current
PD
Total Power Dissipation
TJ
Operating Junction Temperature
TSTG
TL
RthJA
Storage Temperature
Lead Temperature for Soldering Purposes
Thermal Resistance fromJunction to Ambient
Value
20
f12
0.75
1.8
150
-55 to +150
-55 to +150
260
833
Unit
V
V
A
A
mW
к
к
к
к/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
VSD
rDS(on)
gFS
Ciss
COSS
CrSS
td(on)
td(off)
tr
Parameter
Drain-Source Breakdown Voltage
(VGS=0Vdc, ID=250µAdc)
Gate-Threshold Voltage
(VDS=VGS, ID=250μAdc)
Gate-body Leakage
(VDS =0Vdc, VGS =f12Vdc)
Zero Gate Voltage Drain Current
(VDS =20Vdc, VGS =0Vdc)
Diode Forward Voltage
(IS=0.15A,VGS=0V
Drain-Source On-Resistance
(VGS=4.5Vdc, ID=0.65Adc)
(VGS=2.5Vdc, ID=0.55Adc)
(VGS=1.8Vdc, ID=0.45Adc)
Forward transconductance
(VDS=10Vdc, ID=0.8Adc)
Input Capacitance
Output Capacitance
Reverse Transfer
capacitance
VDS=16Vdc,
VGS =0Vdc
f=1MHz
Min
20
0.35
---
---
---
---
---
---
---
---
---
---
Turn-on Time
Turn-off Time
Rise Time
VGS=4.5V, VDS=10V, ---
ID=500mA
---
RGEN=10Ω
---
Typ
---
---
---
---
---
---
---
---
1.6
79
13
9
6.7
17.3
4.8
Max
---
1.0
f50
1
1.2
0.38
0.45
0.80
---
120
20
15
---
---
---
Units
Vdc
Vdc
μA
μAdc
Vdc
S
pF
ns
ns
tr
Fall Time
---
7.4
---
N-Channel MOSFET
SOT-723
A

D

3


CB

1
F
2

E

1.GATE
2. SOURCE
3. DRAIN
G
H
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.045
.049
B
.045
.049
C
.030
.033
D
.011
.015
E
0.031TYP.
F
.007
.011
G
.017
.020
H
.003
.006
J
.000
.002
MM
MIN
MAX
1.15
1.25
1.15
1.25
0.75
0.85
0.27
0.37
0.80TYP.
0.17
0.27
0.43
0.50
0.08
0.15
0.00
0.05
J
NOTE
Revision: A
www.mccsemi.com
1 of 3
2013/10/24



SI3134K
SI3431K
4
Pulsed
3
Output Characteristics
VGS =10.0V/4.5V
V =2.5V
GS
2
1
V =1.5V
GS
2.0
V =5.0V
DS
Pulsed
1.6
1.2
MCC
TM
Micro Commercial Components
Transfer Characteristics
Ta=25oC
T =100O
a
C
0.8
0.4
0
0
1.0
0.8
0.6
1
2
3
4
DRAIN TO SOURCE VOLTAGE V (V)
DS
R
DS(ON)
——
I
D
Ta=25ƒC
Pulsed
V =1.8V
GS
0.4
V =2.5V
GS
0.2
V =4.5V
GS
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
DRAIN CURRENT ID (A)
0.0
0.0
800
700
600
500
400
300
200
100
1
0.5
1.0
1.5
2.0
2.5
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
Ta=25ƒC
Pulsed
I =0.65A
D
2
3
4
5
GATE TO SOURCE VOLTAGE V (V)
GS
10
Ta=25ƒC
Pulsed
1
0.1
0.01
I
S
——
V
SD
Threshold Voltage
0.8
0.7
0.6
ID=250μA
0.5
1E-3
0.4
1E-4
0.0
0.4
0.8
1.2
1.6
2.0
2.4
SOURCE TO DRAIN VOLTAGE V (V)
SD
0.3
25
50
75
100
125
JUNCTION TEMPERATURE T (oC)
J
Revision: A
www.mccsemi.com
2 of 3
2013/10/24







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