Silicon Rectifier. ER1D Datasheet

ER1D Rectifier. Datasheet pdf. Equivalent

Part ER1D
Description Ultra Fast Recovery Silicon Rectifier
Feature NOT RECOMMENDED FOR NEW DESIGNS USE ER1A-LTP~ER1J-LTP SERIES M C C     .
Manufacture MCC
Datasheet
Download ER1D Datasheet




ER1D
NOT RECOMMENDED FOR NEW DESIGNS
USE ER1A-LTP~ER1J-LTP SERIES
M C C            
TM
Micro Commercial Components
       
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
•••

EHULeailgtarshadyfTaPFesirctmekRepAeFScnionodvilsdPeherla/ryRicnToegihm: s2e6Cs0oF°mCorpfHloiarign1ht0(ENSfofeictceioe1nn)dc(sy"PA"tSTueffrimx idneaslsignates
       
Compliant. See ordering information)
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature(Tj): -50°C to +150°C
Storage Temperature(Tstg): -50°C to +150°C
Maximum Thermal Resistance; 15 °C/W Junction To Lead
MCC
Catalog
Number
ER1A
ER1B
ER1C
ER1D
ER1G
ER1J
ER1K
ER1M
Device
Marking
ER1A
ER1B
ER1C
ER1D
ER1G
ER1J
ER1K
ER1M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A TJ = 75°C
Peak Forward Surge
IFSM
Current
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ER1A-D
ER1G-J
VF
ER1K-M
Maximum DC
.975V
1.35V
1.70V
IFM = 1.0A;
TJ = 25°C*
Reverse Current At
IR
5µA TJ = 25°C
Rated DC Blocking
100µA TJ = 100°C
Voltage
Maximum Reverse
Recovery Time
ER1A-D
ER1G-K
Trr
ER1M
50ns
75ns
100ns
IF=0.5A, IR=1.0A,
Irr=0.25A
Typical Junction
Capacitance
CJ
45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200usec,Duty cycle 2%
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.
ER1A
THRU
ER1M
1 Amp Ultra Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AA
(HSMB) (Round Lead)
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.075
.089
C
.002
.008
D
-----
.02
E
.035
.055
F
.065
.091
G
.205
.224
H
.160
.180
J
.130
.155
MM
MIN
1.98
1.90
.05
-----
.90
1.65
5.21
4.06
3.30
B
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
0.070”
Revision: D
www.mccsemi.com
1 of 4
2013/10/14



ER1D
ER1A thru ER1M
Figure 1
Typical Forward Characteristics
50
ER1A~ER1D
10
3.0
1.0
0.1
ER1G~ER1K
ER1M
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
MCC
TM
Micro Commercial Components
Figure 2
Forward Derating Curve
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Amps
1.0
.8
.6
.4
Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
0
0
25 50 75 100 125 150
°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1 .2 .4
TJ=25°C;f=1MHZ
12
4
Volts
10 20 40
Junction Capacitance - pFversus
Reverse Voltage - Volts
100 200 400
1000
Revision: D
www.mccsemi.com
2 of 4
2013/10/14







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)