N-Channel MOSFET. MCMN2012 Datasheet

MCMN2012 MOSFET. Datasheet pdf. Equivalent

Part MCMN2012
Description N-Channel MOSFET
Feature Features • TrenchFET Power MOSFET • Epoxy meets UL 94 V-0 Flammability Rating • Moisture Sensitivity.
Manufacture MCC
Datasheet
Download MCMN2012 Datasheet




MCMN2012
Features
• TrenchFET Power MOSFET
• Epoxy meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
MCMN2012
N-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55oC to +150oC
• Storage Temperature Range: -55oC to +150oC
• Maximum Thermal Resistance: 167oC/W Junction to Ambient(Note 2)
Parameter
Symbol Rating Unit
Drain -Source Voltage
VDS
20
V
Gate-Source Volltage
VGS
±10
V
Drain Current
Drain Current-Pulse (Note1)
ID
12
A
IDM
40
A
Internal Structure
D
D
S
6
5
4
1
2
3
D
D
G
Marking: N2012
DFN2020-6J
*
'
+
)
(
2
4
0
4
4
1
.
-
,
4
3
4
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.028 0.032 0.700 0.800
B
0.008
0.203
C 0.000 0.002 0.000 0.050
D 0.076 0.082 1.924 2.076
E 0.076 0.082 1.924 2.076
F 0.031 0.039 0.800 1.000
G 0.033 0.041 0.850 1.050
H 0.008 0.016 0.200 0.400
J 0.008 ----- 0.200 -----
K 0.018 0.026 0.460 0.660
L
0.026
0.650
M 0.010 0.014 0.250 0.350
N 0.007 0.013 0.174 0.326
NOTE
TYP.
TYP.
Rev.3-2-04102020
1/5
MCCSEMI.COM



MCMN2012
MCMN2012
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Threshold Voltage(Note 3)
VGS(th) VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-Resistance
RDS(on)
Forward Tranconductance(Note 3)
gFS
Diode Forward Voltage
VSD
Dynamic Characteristics(Note 4)
VGS =± 10V, VDS =0V
VDS =20V, VGS =0V
VGS=4.5V, ID=5A
VGS=2.5V, ID=5A
VGS=1.8V, ID=5A
VDS=4V, ID=9.7A
VGS=0V, IS=10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=4V,VGS=0V, f=1MHz
Gate Resistance
Rg
Switching Characteristics(Note 4)
f=1MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=4V,VGEN=4.5V,RL=0.4Ω,
ID=10A,RG=1Ω
Total Gate Charge
Qg
Gate-Source Chage
Qgs
VDS=4V,Vgs=5V,ID=10A
Gage-Drain Charge
Qgd
Note:
1. Surface Mounted On FR4 Board Using 1 Square Inch Pad Size, 1oz Copper.
2. Surface Mounted On FR4 Board Using The Minimum Pad Size,1oz Copper.
3. Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%.
4. These Parameters Have No Way To Verify.
Min Typ Max Unit
20
V
0.35
0.7
1.0
V
±100
nA
1
µA
10
15
13
18
18
30
20
S
1.2
V
1800
650
pF
450
2.5
Ω
12
20
10
15
ns
65
100
20
30
32
2.5
nC
6.5
Rev.3-1-01012019
2/5
MCCSEMI.COM







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