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LL42 Dataheets PDF



Part Number LL42
Manufacturers JINAN JINGHENG
Logo JINAN JINGHENG
Description SMALL SIGNAL SCHOTTKY DIODES
Datasheet LL42 DatasheetLL42 Datasheet (PDF)

R SEMICONDUCTOR FEATURES For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type designation BAT42 to BAT43. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: MiniMELF gla.

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R SEMICONDUCTOR FEATURES For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type designation BAT42 to BAT43. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: MiniMELF glass case(SOD-80 ) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Repetitive Peak Reverse Voltage Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp < 1s, d < 0.5, Surge forward current at tp < 10mS , TA=25 C Power Dissipation at TA=65 C TA=25 C Junction Temperature Ambient Operating temperature Range Storage Temperature Range 1) Valid provided thatelectrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS Reverse breakdown voltage Tested with 100mA Forward voltage Pulse Test tp < 300ms,d < 2% at IF=200mA, at IF=10mA, at IF=50mA, at IF=2mA, at IF=15mA LL42 LL42 LL43 LL43 Leakage current Pulse Test tp < 300ms,d < 2% at VR=25V at VR=25V, TJ=100℃ Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA Detection efficiency at RL=15kW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient Air 1) Valid provided that electrodes are kept at ambient temperature Symbols V(BR)R VF VF VF VF VF IR IR CJ trr RqJA Symbols VRRM IF IFRM IFSM Ptot TJ TA TSTG Min. 30 0.26 80 JINAN JINGHENG ELECTRONICS CO., LTD. 2-48 LL42,LL43 SMALL SIGNAL SCHOTTKY DIODES MiniMELF 0.142(3.6) 0.134(3.4) 0.063(1.6) 0.055(1.4) 0.019(0.48) 0.011(0.28) Dimensions in inches and (millimeters) Value 30 1) 200 1) 500 1) 4 1) 200 125 -65 to+125 -65 to+150 Units V mA mA A mW C C C Typ. Max. Unis V 1 V 0.4 V 0.65 V 0.33 V 0.45 V 0.5 mA 100 mA 7 pF 5 300 1) ns % K/W HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL42/LL43 Figure 1. Forward current versus forward voltage at different temperatures(typical values) IF(mA) 3 10 2 10 Figure 2. Forward current versus forward voltage (typical values) IF(mA) 500 Tj= 25 C 400 10 300 Tamb=125 C 1 Tamb= 25 C 200 Tamb= -55 C -1 10 100 -2 10 0 0.2 0.4 0.6 0.8 1 1.2 0 VF(V) Figure 3.Reverse current versus ambient temperature(typical values) 0.2 0.4 0.6 0.8 1 VF(V) IR(mA) 3 10 90% confidence VR=25V 2 10 max. typ. 1 10 1 -1 10 -2 10 0 25 50 75 100 125 Tamb=( C) JINAN JINGHENG ELECTRONICS CO., LTD. 2-49 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL42/LL43 Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) 3 10 2 10 1 10 1 125 C 100 C 75 C 50 C -1 10 25 C -2 10 0 5 10 15 20 25 30 VR(V) Figure 5.Capacitance CJ versus reverse applied voltage VR (typical values) CJ(pF) 12 Tamb= 25 C 10 8 6 4 2 0 5 10 15 20 25 30 VR(V) JINAN JINGHENG ELECTRONICS CO., LTD. 2-50 HTTP://WWW.JINGHENGGROUP.COM .


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