Document
R
SEMICONDUCTOR
FEATURES
For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type designation BAT42 to BAT43. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 ) Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp < 1s, d < 0.5,
Surge forward current at tp < 10mS ,
TA=25 C
Power Dissipation at TA=65 C
TA=25 C
Junction Temperature
Ambient Operating temperature Range
Storage Temperature Range
1) Valid provided thatelectrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with 100mA
Forward voltage Pulse Test tp < 300ms,d < 2% at IF=200mA, at IF=10mA, at IF=50mA, at IF=2mA, at IF=15mA
LL42 LL42 LL43 LL43
Leakage current Pulse Test tp < 300ms,d < 2% at VR=25V at VR=25V, TJ=100℃
Junction Capacitance at VR=1V ,f=1MHz
Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA Detection efficiency at RL=15kW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient Air
1) Valid provided that electrodes are kept at ambient temperature
Symbols
V(BR)R
VF VF VF VF VF IR IR CJ trr
RqJA
Symbols
VRRM IF IFRM IFSM Ptot TJ TA TSTG
Min. 30
0.26
80
JINAN JINGHENG ELECTRONICS CO., LTD.
2-48
LL42,LL43
SMALL SIGNAL SCHOTTKY DIODES
MiniMELF
0.142(3.6) 0.134(3.4)
0.063(1.6) 0.055(1.4)
0.019(0.48) 0.011(0.28)
Dimensions in inches and (millimeters)
Value
30
1)
200
1)
500
1)
4
1)
200
125
-65 to+125 -65 to+150
Units
V mA mA A mW
C C C
Typ.
Max.
Unis
V
1
V
0.4
V
0.65
V
0.33
V
0.45
V
0.5
mA
100
mA
7
pF
5 300 1)
ns % K/W
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL42/LL43
Figure 1. Forward current versus forward voltage at different temperatures(typical values)
IF(mA)
3
10
2
10
Figure 2. Forward current versus forward voltage (typical values)
IF(mA)
500
Tj= 25 C
400
10
300
Tamb=125 C
1
Tamb= 25 C
200
Tamb= -55 C
-1
10
100
-2
10
0
0.2
0.4
0.6
0.8
1
1.2
0
VF(V)
Figure 3.Reverse current versus ambient temperature(typical values)
0.2
0.4
0.6
0.8
1 VF(V)
IR(mA)
3
10
90% confidence VR=25V
2
10
max.
typ.
1
10
1
-1
10
-2
10 0
25
50
75
100
125
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-49
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL42/LL43
Figure 4.Reverse current versus continuous Reverse voltage(typical values)
IR(mA)
3
10
2
10
1
10 1
125 C 100 C
75 C 50 C
-1
10
25 C
-2
10 0
5
10
15
20
25
30 VR(V)
Figure 5.Capacitance CJ versus reverse applied voltage VR (typical values)
CJ(pF)
12
Tamb= 25 C
10
8
6
4 2
0
5
10
15
20
25
30 VR(V)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-50
HTTP://WWW.JINGHENGGROUP.COM
.