Diode
MMBD1501/A / 1503/A / 1504/A / 1505/A
N
Discrete POWER & Signal Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3...
Description
MMBD1501/A / 1503/A / 1504/A / 1505/A
N
Discrete POWER & Signal Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3 SOT-23
3
11
1
2
2
MARKING
MMBD1501 11 MMBD1501A A11
1
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
CONNECTION DIAGRAMS
1501 3
3 1503
1
1504
2 NC 3
1
2
3 1505
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV
Working Inverse Voltage
180
IO
Average Rectified Current
200
IF
DC Forward Current
600
if
Recurrent Peak Forward Current
700
if(surge) Tstg
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond
Storage Temperature Range
1.0 2.0 -55 to +150
TJ
Operating Junction Temperature
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V mA mA mA
A A °C °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
MMBD1501/A/ 1503-1505/A*
350 2.8 357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2...
Similar Datasheet