MMBD1504A

MMBD1501/A / 1503/A / 1504/A / 1505/A N Discrete POWER & Signal Technologies MMBD1501/A / 1503/A / 1504/A / 1505/A 3 SOT-23 3 11 1 2 2 MARKING MMBD1501 11 MMBD1501A A11 1 MMBD1503 13 MMBD1503A A13 MMBD1504 14 MMBD1504A A14 MMBD1505 15 MMBD1505A A15 CONNECTION DIAGRAMS 1501 3 3 1503 1 1504 2 NC 3 1 2 3 1505 1 2 1 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value WIV Working Inverse Voltage 180 IO Average Rectified Current 200 IF DC Forward Current 600 if Recurrent Peak Forward Current 700 if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 TJ Operating Junction Temperature 150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA mA mA A A °C °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max PD Total Device Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient MMBD1501/A/ 1503-1505/A* 350 2.8 357 *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2...