Optocoupler. CNY21Exi Datasheet

CNY21Exi Optocoupler. Datasheet pdf. Equivalent

Part CNY21Exi
Description Optocoupler
Feature TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21Exi consists .
Manufacture TEMIC
Datasheet
Download CNY21Exi Datasheet



CNY21Exi
TELEFUNKEN Semiconductors
Optocoupler with Phototransistor Output
Description
The CNY21Exi consists of a phototransistor optically
coupled to a gallium arsenide infrared emitting diode in
a 4 lead plastic dual inline packages.
The single components are mounted on one leadframe in
opposite position, providing a fixed distance between in-
put and output for highest safety requirements of > 3 mm.
CNY21Exi
95 10533
Applications
Used for circuits with intrinsic safety Ex-i (G5).
PTB-approval-file number Ex-90.C.2106 U confirms,
that this coupler can be used for intrinsic circuits up to a
line voltage in series 375 V.
Features
D UL-recognized-file No: E 76414
D DC isolation test voltage: 10 kV
D Creeping current resistance of isolation material ac-
cording to VDE 0303/DIN 53480:
KB 150/KC 175
D Isolation material according to UL 94 -flammability
class
D Test class 25/100/21 DIN 40045
D Very low coupling capacity, typical 0.3 pF
therefore high noise voltage resistant
D Current Transfer Ratio typical 80%
D Low temperature coefficient of CTR
Pin Connection
A (+)
C
C (–)
E
Rev. A1: 20.09.1995
1 (5)



CNY21Exi
CNY21Exi
Absolute Maximum Ratings
Input (Emitter)
Parameters
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp 10 ms
Tamb 25°C
TELEFUNKEN Semiconductors
Symbol
Value
Unit
VR
5
V
IF
50
mA
IFSM
1.5
A
PV
120
mW
Tj
100
°C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
5
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation
Tamb 25°C
PV
130
mW
Junction temperature
Tj
100
°C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
DC isolation test voltage
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
t = 1 min
VIO 1)
10
kV
Tamb 25°C
Ptot
250
mW
Tamb
–55 to +85
°C
Tstg
–55 to +100
°C
2 mm from case, t 10 s
Tsd
260
°C
1)
related to standard climate 23/50 DIN 50014
2 (5)
Rev. A1: 20.09.1995







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