N-Channel MOSFET
Features
• High Current Rating • Lower RDS(ON) • Lower Capacitance • Lower Total Gate Charge • Tighter VSD Specification...
Description
Features
High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
Operating Junction Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 62.5°C/W Junction to Ambient
Parameter
Symbol Rating
Unit
Drain -Source Voltage
VDS
600
V
Gate -Source Volltage
VGS
±30
V
Drain Current-Continuous
ID
4.0
A
Continuous Drain-Source Diode Forward Current IS
4.0
A
Single Pulsed Avalanche Energy(Note1)
EAS
80
mJ
Internal Structure
D
G S
1.GATE 2.DRAIN
3.SOURCE
MCPF04N60
N-CHANNEL MOSFET
TO-220F
M
A B
N
C
D
12 3
P J
F E
QH G
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.392 0.421 9.96 10.70
B
0.138
3.50
C
0.106
2.70
D 0.567 0.642 14.40 16.30
E
0.520
13.20
F --- 0.177 --- 4.50
G
0.100
2.54
H 0.020 0.035 0.50 0.90
J 0.043 0.053 1.10 1.35
M 0.169 0.201 4.30 5.10
N --- 0.140 --- 3.56
P 0.083 0.126 2.10 3.20
Q 0.020 0.032 0.50 0.80
NOTE
Φ TYP. TYP. TYP.
Rev.3-2-04302019
1/4
MCCSEMI.COM
MCPF04N60
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)...
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