MCU15N10A

MCU15N10A Features Trench Power MV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 4.4°C/W Junction to Case Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Volltage VGS ±20 TC=25°C Continuous Drain Current ID 15 TC=100°C 10.5 Pulsed Drain Current IDM 60 Single Pulse Avalanche Energy(Note 1) EAS 9 Total Power Dissipation PD 34 Note: 1.EAS Condition:TJ=25°C,VDD=50V,VG=10V,Rg=25Ω. Unit V V A A A mJ W Internal Structure D G S 1.GATE 2.DRAIN 3.SOURCE 4.DRAIN N-CHANNEL MOSFET DPAK J H C 1 O 2 4 FE I 3 M K V G L Q A B D DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 G 0.190 4.83 H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 K 0.114 2.90 L 0.055 0.067 1.40 1.70 M 0.063 1.60 O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 NOTE TYP. TYP. TYP. TYP. Rev.3-1-05292019 1/4 MCCSEMI.COM Electrical C...