N-Channel MOSFET
MCU02N80
Features
• Lower Capacitance • Lower Total Gate Charge • Lower RDS(on) • Tighter VSD Specifications • Avalanch...
Description
MCU02N80
Features
Lower Capacitance Lower Total Gate Charge Lower RDS(on) Tighter VSD Specifications Avalanche Energy Specified Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 100°C/W Junction to Ambient
Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1)
Symbol VDS VGS ID IDM EAS
Rating 800 ±30 2.4 9.6 180
Note: 1. IL=2.4A, VDD=50V, RG=25Ω,Starting TJ=25°C.
Unit V V A A mJ
Internal Structure
D
G S
N-CHANNEL MOSFET
DPAK(TO-252)
J H
C
1
O
2
4 FE
I
3
M
K
V
G L
Q
A
B
D
1. Gate 2,4. Drain
3. Source
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G
0.190
4.83
H 0.236 0.244 6.00 6.20
I 0.086 0.094 2.18 2.39
J 0.386 0.409 9.80 10.40
K
0.114
2.90
L 0.055 0.067 1.40 1.70
M
0.063
1.60
O 0.043 0.051 1.10 1.30
Q 0.000 0.012 0.00 0.30
V
0.211
5.35
NOTE
TYP. TYP. TYP. TYP.
Rev.3-1-01012019
1/4
MCCSEMI.COM
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
S...
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