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MCU02N80

MCC

N-Channel MOSFET

MCU02N80 Features • Lower Capacitance • Lower Total Gate Charge • Lower RDS(on) • Tighter VSD Specifications • Avalanch...


MCC

MCU02N80

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Description
MCU02N80 Features Lower Capacitance Lower Total Gate Charge Lower RDS(on) Tighter VSD Specifications Avalanche Energy Specified Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 100°C/W Junction to Ambient Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Symbol VDS VGS ID IDM EAS Rating 800 ±30 2.4 9.6 180 Note: 1. IL=2.4A, VDD=50V, RG=25Ω,Starting TJ=25°C. Unit V V A A mJ Internal Structure D G S N-CHANNEL MOSFET DPAK(TO-252) J H C 1 O 2 4 FE I 3 M K V G L Q A B D 1. Gate 2,4. Drain 3. Source DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 G 0.190 4.83 H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 K 0.114 2.90 L 0.055 0.067 1.40 1.70 M 0.063 1.60 O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 NOTE TYP. TYP. TYP. TYP. Rev.3-1-01012019 1/4 MCCSEMI.COM Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter S...




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