N-Channel MOSFET
Features
• High Current Rating • Lower RDS(ON) • Lower Capacitance • Lower Total Gate Charge • Tighter VSD Specification...
Description
Features
High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
Operating Junction Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 62.5°C/W Junction to Ambient
Parameter Drain -Source Voltage Gate -Source Volltage Drain Current-Continuous Drain Current-Pulse
Power Dissipation Single Pulsed Avalanche Energy(Note1)
Symbol Rating
Unit
VDS
650
V
VGS
±30
V
ID
4.0
A
IDM
16
A
PD
2.0
W
EAS
80
mJ
Internal Structure
D
G S
1.GATE 2.DRAIN
3.SOURCE
MCP04N65
N-CHANNEL MOSFET
TO-220
B
A
1 23
H
F
C
S
Q
T
U
K G N
D
R
J
VL
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.560 0.625 14.22 15.88
B 0.380 0.420 9.65 10.67
C 0.140 0.190 3.56 4.82
D 0.020 0.045 0.51 1.14
F 0.139 0.161 3.53 4.09
G 0.090 0.110 2.29 2.79
H ----- 0.250 ----- 6.35
J 0.012 0.025 0.30 0.64
K 0.500 0.580 12.70 14.73
L 0.045 0.060 1.14 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.135 2.54 3.43
R 0.080 0.115 2.04 2.92
S 0.045 0.055 1.14 1.39
T 0.230 0.270 5.84 6.86
U ----- 0.050 ----- 1.27
V 0.045 ----- 1.15 -----
NOTE Φ
Rev.3-1-01012019
1/4
MCCSEMI.COM
MCP04N65
ELECTRICAL CHARACTER...
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