Dual N-Channel MOSFET
MCQ08N06
Features
• High Density Cell Design for Low RDS(on) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sen...
Description
MCQ08N06
Features
High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
Operating Junction Temperature Range : -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 107°C/W Junction to Ambient(Note 1)
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Volltage
VGS
±20
V
Continuous Drain Current Pulsed Drain Current (Note 2)
ID
8
A
IDM
40
A
Total Power Dissipation
PD
1.4
W
Note:
1.The Value of RθJA is Measured with the Device Mounted on 1 in2 FR-4 Board with 2oz. Copper, in a Still Air Environment with TA=25°C.
2.Repetitive Rating; Pulse Width Limited by Maximum Junction Temperature.
Internal Structure
Dual N-Channel Power MOSFET
C HJ
SOP-8
D
B
A
F
E
K
G
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.053 0.069 1.35 1.75
B 0.004 0.010 0.10 0.25
C 0.053 0.061 1.35 1.55
D 0.013 0.020 0.33 0.51
E 0.007 0.010 0.17 0.25
F 0.185 0.200 4.70 5.10
G
0.050
1.270
H 0.228 0.244 5.80 6.20
J 0.150 0.157 3.80 4.00
K 0.016 0.050 0.40 1.27
θ 0° 8° 0° 8°
NOTE TYP.
Suggested Solder Pad Layout
4.61mm
6.50mm 1.50mm
1.27mm 0.80mm
Rev.3-1-01012019
1/3
MCCSEMI.COM
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditio...
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