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MCQ08N06

MCC

Dual N-Channel MOSFET

MCQ08N06 Features • High Density Cell Design for Low RDS(on) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sen...


MCC

MCQ08N06

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Description
MCQ08N06 Features High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 107°C/W Junction to Ambient(Note 1) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Volltage VGS ±20 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 8 A IDM 40 A Total Power Dissipation PD 1.4 W Note: 1.The Value of RθJA is Measured with the Device Mounted on 1 in2 FR-4 Board with 2oz. Copper, in a Still Air Environment with TA=25°C. 2.Repetitive Rating; Pulse Width Limited by Maximum Junction Temperature. Internal Structure Dual N-Channel Power MOSFET C HJ SOP-8 D B A F E K G DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 K 0.016 0.050 0.40 1.27 θ 0° 8° 0° 8° NOTE TYP. Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-1-01012019 1/3 MCCSEMI.COM Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditio...




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