N-CHANNEL MOSFET
Elektronische Bauelemente
SMS8820
7A , 20V , RDS(ON) 21 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A...
Description
Elektronische Bauelemente
SMS8820
7A , 20V , RDS(ON) 21 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD-protected.
This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
8820
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3 2
J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20
0.6 REF. 0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1
IDM
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature Range
TJ, TSTG
Lead Temperature for Soldering Purposes@1/8’’
from case for 10s
TL
Notes: 1. Repetitive rating:Pulse width limited by the junction temperature.
Rating 20 ±12 7 25 417
150, -55~150
260
Unit V V A A
°C / W °C
°C
http://www.SeCoSGmbH.com/
25-Nov-2015 Rev.A
Any changes of specification will not be informed individually.
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