SSD20N15

Elektronische Bauelemente SSD20N15 20A, 150V, RDS(ON) 70mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES 150V, 20A, RDS(ON)≦70mΩ@VGS=10V Super high dense cell design for extremely low RDS(ON) High power and current handing capability Green Device Available TO-252 (D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch MARKING 20N15 Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS=10V 1 TC=25°C ID TC=100°C Pulsed Drain Current 2 IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Case 1 RθJC Maximum Thermal Resistance from Junction to Ambient 1 RθJA A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 Rating 150 ±25 20 14 70 50 2 -55~150 2.5 62.5 Unit V V A A A W W °C °C / W °C / W http://www.SeCoSGmbH.com/ 25-Feb-2016 Rev. B Any changes of specification will not be informed individually. Page 1 of 5 Elektronische Bauelemente SSD20N15 20A, 150V, RDS(ON) 70mΩ N-Channel Enhancement MOSFET ELECTRI...