N-Channel MOSFET
Elektronische Bauelemente
SMS318Y-C
340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Pr...
Description
Elektronische Bauelemente
SMS318Y-C
340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS318Y-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.
The SMS318Y-C meet the RoHS and Green Product requirement with full function reliability approved.
SOT-23
FEATURES
Advanced High Cell Density Trench Technology Voltage Controlled Small Signal Switch Low Input Capacitance Fast Switching Speed Low Input / Output Leakage
MARKING
SS.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.28 0.55
REF.
G H J K L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.26
0.60 REF.
0.95 TYP.
ORDER INFORMATION
Part Number
Type
SMS318Y-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain Current @VGS=10V
ID
TA=70°C
Pulsed Drain Current 1
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 2
RθJA
Rating 50 ±20 340 272 1.5 350
-55~150
Steady State, 357
Unit V V
mA A mW °C
°C/W
...
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