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SMS318Y-C

SeCoS

N-Channel MOSFET

Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...


SeCoS

SMS318Y-C

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Description
Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS318Y-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS318Y-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Voltage Controlled Small Signal Switch  Low Input Capacitance  Fast Switching Speed  Low Input / Output Leakage MARKING SS. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.26 0.60 REF. 0.95 TYP. ORDER INFORMATION Part Number Type SMS318Y-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current @VGS=10V ID TA=70°C Pulsed Drain Current 1 IDM Total Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 2 RθJA Rating 50 ±20 340 272 1.5 350 -55~150 Steady State, 357 Unit V V mA A mW °C °C/W ...




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