SSPRDJ6560-C

Elektronische Bauelemente SSPRDJ6560-C N-Ch: 6.8A, 60V, RDS(ON) 45mΩ P-Ch: -5.1A, -60V, RDS(ON) 82mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPRDJ6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPRDJ6560-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J6560 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1.535 1.935 0.28 0.48 REF. H J K L M N Millimeter Min. Max. 0.55 0.75 0.3 0.5 0.315 0.515 0.2 0.4 0.152 REF. 0.65 0.85 ORDER INFORMATION Part Number Type SSPRDJ6560-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC=25°C TC=100°C Continuous Drain Current, @VGS=10V 1 TA=25°C Pulsed Drain Current 3 TA=70°C Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 Thermal Resistance Junction-Case 1 http://www.SeCoSGmbH.com/ 07-May-2020 Rev. A VDS VGS ID ID...