SSD80N03J

Elektronische Bauelemente SSD80N03J 80A, 30V, RDS(ON) 6.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD80N03J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed MARKING CJU80N03 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.7 E 6.8 7.6 O 0 0.15 F 2.9 REF. P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Single Pulse Avalanche Energy 1 EAS Total Power Dissipation PD Maximum Thermal Resistance Junction-Ambient RθJA Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL Operating Junction and Storage Temperature Range Notes: 1. EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C TJ, TSTG 3 Source Rating 30 ±20 80 320 306 1.25 100 260 150, -55~150 Unit V V A A mJ W °C / W °C °C http://www.SeCoS...