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BAW56

SeCoS

Surface Mount Switching Diode

Elektronische Bauelemente BAW56 Dual Chips Common Anode Surface Mount Switching Diode RoHS Compliant Product FEATURES...


SeCoS

BAW56

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Elektronische Bauelemente BAW56 Dual Chips Common Anode Surface Mount Switching Diode RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free A · Fast Switching Speed L · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications 3 Top View 1 2 BS · High Conductance V G CATHODE 3 ANODE 3 1 2 CATHODE 1 2 C D H K J MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BAW56 = A1 Symbol VR IF IFM(surge) Value 70 200 500 Symbol PD RqJA PD RqJA TJ, Tstg Max 225 1.8 556 300 2.4 417 – 55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) 70 Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = ...




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