Document
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications • Complement to TIP42 Series
1
TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number TIP41A TIP41B TIP41C
TIP41CTU
Top Mark TIP41A TIP41B TIP41C TIP41C
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk Bulk Bulk Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
TIP41A
60
VCBO
Collector-Base Voltage
TIP41B
80
V
TIP41C
100
TIP41A
60
VCEO
Collector-Emitter Voltage
TIP41B
80
V
TIP41C
100
VEBO IC ICP IB TJ
TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Range
5
V
6
A
10
A
2
A
150
°C
-65 to 150
°C
© 2000 Semiconductor Components Industries, LLC. November-2017,Rev. 2
Publication Order Number: TIP41C/D
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol PC
Parameter Collector Dissipation (TC = 25°C) Collector Dissipation (TA = 25°C)
Value 65 2
Unit W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
TIP41A
Collector-Emitter Sustaining Voltage(1)
TIP41B
TIP41C
ICEO
Collector Cut-Off Current
TIP41A
TIP41B / TIP41C
TIP41A
ICES Collector Cut-Off Current TIP41B TIP41C
IEBO Emitter Cut-Off Current
hFE
DC Current Gain(1)
VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Base-Emitter On Voltage(1)
fT
Current Gain Bandwidth Product
Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
IC = 30 mA, IB = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VCE = 60 V, VEB = 0 VCE = 80 V, VEB = 0 VCE = 100 V, VEB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 0.3 A VCE = 4 V, IC = 3 A IC = 6 A, IB = 600 mA VCE = 4 V, IC = 6 A VCE = 10 V, IC = 500 mA, f = 1 MHz
Min. 60 80 100
30 15
3.0
Max.
0.7 0.7 400 400 400 1
75 1.5 2.0
Unit V
mA
μA mA
V V MHz
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TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
0.5ms 1ms 5ms
Typical Performance Characteristics
1000
VCE = 4V
100
hFE, DC CURRENT GAIN
10
IC[A], COLLECTOR CURRENT
1
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
100
IC(MAX) (PULSE) 10
IC(MAX) (DC)
1
0.1 1
TIP41 VCEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX.
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000
1000
VBE(sat)
IC/IB = 10
100 VCE(sat)
10
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage
P [W], POWER DISSIPATION C
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T [oC], CASE TEMPERATURE C
Figure 4. Power Derating
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TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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