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SPA15N65C3

INCHANGE

N-Channel MOSFET

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin...



SPA15N65C3

INCHANGE


Octopart Stock #: O-1449802

Findchips Stock #: 1449802-F

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Description
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SPA15N65C3 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 15 9.4 45 PD Total Dissipation @TC=25℃ 34 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.7 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA15N65C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 650 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=0.68mA 2.1 3.9 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9.4A 250 280 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±20V;VDS= 0V VDS= 650V; VGS= 0V;Tj=25℃ VDS= 650V; VGS= 0V; Tj=150℃ ISD=15A, VGS = 0V ±0.1 μA ...




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