Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STB75NF75T4
·FEATURES ·With To-263(D2PAK) package ·Excellent sw...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STB75NF75T4
·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=175℃）
TC=125℃
Drain Current-Single Pulsed
±20
80 70
320
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.14 100
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STB75NF75T4
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
75
V
VGS(th)
Gate Threshold Voltage
VDS= ±20V; ID=0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=40A
9.5
11
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS= 75V; VGS= 0V；TJ=25℃ TJ=125℃
Diode forward voltage
ISD=80A, VGS = 0 V
±0.1 μA
1 10
μA
1.5
V
NOTICE： ISC reserves the rights to mak...
