isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FQPF10N20C
·FEATURES ·With low gate drive requirements ·Easy to...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FQPF10N20C
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
9.5 6.0
38
PD
Total Dissipation
38
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.33
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FQPF10N20C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.75A
0.29 0.36
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 200V; VGS= 0V;@Tc=25℃ VDS= 160V; VGS= 0V Tc=125℃
ISD=9.5A, VGS = 0 V
±0.1 μA
10 100
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without n...
