isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
INCHANGE Semiconductor
FS50UM-3
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation
125
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.0 62.5
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
FS50UM-3
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
150
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=25A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
24
31
mΩ
±0.1 μA
IDSS
Drain-Source Leakage Current
VDS= 150V; VGS= 0V
0.1
mA
VSDF
Diode forward voltage
ISD=25A, VGS = 0 V
1.5
V
NOTICE： ISC reserves the righ...
