IPA60R190C6

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R190C6 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 20.2 12.8 59 PD Total Dissipation 34 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.7 80 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R190C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.63mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9.5A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSDF Diode forward voltage ISD=9.5...