Power MOSFET
PD - 97228
PDP SWITCH
IRFI4228PbF
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,
...
Description
PD - 97228
PDP SWITCH
IRFI4228PbF
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
150
V
VDS (Avalanche) typ. RDS(ON) typ. @ 10V
180
V
12.2
m:
IRP max @ TC= 100°C
61
A
TJ max
150
°C
D
D
G
S
D
G
S
TO-220AB Full-Pak
G Gate
D Drain
S Source
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repeti...
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