isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tes...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SK1085-M
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
3
IDM
Drain Current-Single Pulsed
12
PD
Total Dissipation
20
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 6.25 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
2SK1085-M
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
150
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=1mA
1.0
2.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 4V; ID=1.5A
0.72 1.17
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±25V;VDS= 0V
VDS= 150V; VGS= 0V;Tj=25℃ Tj=125℃
ISD=3A, VGS = 0 V
±0.1 μA
0.5 1.0
mA
1.43
V
NOTICE: ISC reserves the rights to m...