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2SK1837 Dataheets PDF



Part Number 2SK1837
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK1837 Datasheet2SK1837 Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1837 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·No secondary breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Vo.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1837 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·No secondary breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=25A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=400V; VGS= 0V;Tc=25℃ VSDF Diode forward voltage ISD=50A, VGS = 0V 500 V 2.0 4.0 V 85 110 mΩ ±0.1 μA 250 μA 1.1 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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