isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
AOB410L
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed s...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOB410L
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±25
150 108
405
PD
Total Dissipation
333
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.45 65
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOB410L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
IDSS
Drain-Source Leakage Current
VSDF
Diode forward voltage
VDS=5V; ID=0.25mA
VGS= 10V; ID=20A;Tj=25℃ Tj=125℃
VGS= ±25V;VDS= 0V
VDS= 100V; VGS= 0V;Tj=25℃ Tj=55℃
ISD=1A, VGS = 0 V
100
V
2.0
4.0
V
5.1 8.8
6.5 11
mΩ
±0.1 μA
10 50
μA
1.0
V...
