AOD9N52

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD9N52 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 520 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed ±30 9 5.7 27 PD Total Dissipation @TC=25℃ 178 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.7 55 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD9N52 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 5V; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±30V;VDS= 0V Drain-Source Leakage Current VDS=520V; VGS= 0V;Tj=25℃ VDS=420V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=1A, VGS = 0 V 520 V 3.3 4.5 V 0.71 0.86 Ω ±0.1 μA 1 10 μA 1 V NOTICE： ISC reserves the r...