isc N-Channel MOSFET Transistor
·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ru...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Industrial and motor drive applications ·DC/DC and AC/DC converters ·Switching applications
INCHANGE Semiconductor
AOD2910E
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
37 26
70
PD
Total Dissipation
71.5
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.1 50
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOD2910E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V;Tc=25℃ VDS= 100V; VGS= 0V;Tc=55℃
ISD=1A, VGS...
