isc P-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch...
isc P-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
AOI409
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
-26 -18
-60
PD
Total Dissipation
60
Tj
Operating Junction Temperature
-50~175
Tstg
Storage Temperature
-50~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.5 50
UNIT ℃/W ℃/W
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isc P-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOI409
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=-0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-20A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= -48V; VGS= 0V;Tj=25℃ Tj=55℃
ISD=-1A, VGS = 0 V
-60
V
-1.2
-2.4
V
32
40
mΩ
±0.1 μA
-1 -5
μA
-1
V
NOTICE： ISC reserve...
