isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
AOTF4N60
·FEATURES ·With TO-220F packaging ·High speed switchin...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOTF4N60
·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
7 2.5
16
PD
Total Dissipation
35
Tj
Operating Junction Temperature
-50~150
Tstg
Storage Temperature
-50~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.6 65
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOTF4N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
3.0
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=2A
1.9
2.2
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;Tc=25℃ VDS= 480V; VGS= 0V;Tc=150℃
ISD=1A, VGS = 0 V
±0.1 μA
...
