N-Channel MOSFET
AOT4N60/AOTF4N60/AOTF4N60L
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOT4N60 & AOTF4N60 & AOTF...
Description
AOT4N60/AOTF4N60/AOTF4N60L
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
700V@150℃ 4A < 2.2W
TO-220
Top View
TO-220F
D
D
S D G
AOT4N60
DS G
AOTF4N60(L)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
TC=25°C Power Dissipation B Derate above 25oC
VDS VGS
ID
IDM IAR EAR EAS dv/dt
PD
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT4N60
4 2.7
104 0.83
AOT4N60 65 0.5 1.2
G S
AOTF4N60 600 ±30 4* 2.7* 16 2.5 94 188 50 5 35 0.28
-55 to 150
300
AOTF4N60 65 -3.6
AOTF4N6...
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