N-Channel MOSFET
AOTF2210L
200V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge...
Description
AOTF2210L
200V N-Channel MOSFET
General Description
Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V)
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications
100% UIS Tested 100% Rg Tested
Top View
TO220F Bottom View
200V 13A < 90mΩ < 106mΩ
D
G DS
S DG
Orderable Part Number
AOTF2210L
Package Type
TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
VDS Spike Power Dissipation B
10µs TC=25°C TC=100°C
VSPIKE PD
Power Dissipation A
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RθJA
10 45
Maximum Junction-to-Case
Steady-State
RθJC
3.4
G
Form
Tube
S
Minimum Order Quantity
1000
Maximum 200 ±20 13 9 45 6.5 5.0 9 4 240 36.5 18 8.3 5.3
-55 to 175
Units V V
A
A A mJ V W
W °C
Max
Units
15
°C/W
55
°C/W
4.1
°C/W
Rev.1.0: November 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
C...
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