isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
BUZ45
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = ...
isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
BUZ45
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching
regulators, switching converters, motor drivers,relay drivers and drivers for high power
bipolar switching
transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9.6
A
IDM
Drain Current-Single Plused
38
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35 ℃/W
isc website:www.iscsemi.com
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isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
BUZ45
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Gfs
Forward Transconductance
td(on)
Turn-on Delay ...