EKI04027

isc N-Channel MOSFET Transistor INCHANGE Semiconductor EKI04027 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 85 IDM Drain Current-Single Pulsed 170 PD Total Dissipation 135 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.9 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor EKI04027 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.1mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=1.5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=82.5A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 40V; VGS= 0V VSDF Diode forward voltage ISD=82.5A, VGS = 0 V 40 V 1.0 2.5 V 2.6 3.2 mΩ ±0.1 μA 100 μA 1.5 V NOTICE： ISC reserves ...