isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FCD2250N80Z
·FEATURES ·With TO-252(DPAK) packaging ·UIS capabil...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCD2250N80Z
·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications ·AD-AC power supply ·LED lighting
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
2.6 1.7
6.5
PD
Total Dissipation
39
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.2 100
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCD2250N80Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
800
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.26mA
2.5
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.3A
1.87 2.25
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 800V; VGS= 0V;Tj=25℃ VDS= 640V; VGS= 0V;Tj=175℃
ISD=2.6A, VGS = 0 V
±10
μA
25 250...
