N-Channel MOSFET
FDD3682-F085 N-Channel PowerTrench® MOSFET
FDD3682-F085
N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ
Features
• rDS(ON...
Description
FDD3682-F085 N-Channel PowerTrench® MOSFET
FDD3682-F085
N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ
Features
rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Formerly developmental type 82755
Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection System 42V Automotive Load Control Electronic Valve Train System
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
Operating and Storage Temperature
Ratings 100 ±20
32 23 5.5 Figure 4 55 95 0.63 -55 to 175
Units V V
A A A A mJ W W/oC oC
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.58 100 52
oC/W oC/W oC/W
This product has been designed to meet the extreme test conditions and environmen...
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