FDD9407-F085

FDD9407-F085 N-Channel Power Trench® MOSFET FDD9407-F085 N-Channel Power Trench® MOSFET 40V, 100A, 2.0mΩ D Features „ Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems D G G S DTO-P-2A5K2 (TO-252) S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Package Marking and Ordering Information Ratings 40 ±20 100 See Figure4 171 227 1.52 -55 to + 175 0.66 52 Units V V A mJ W W/oC oC oC/W oC/W Device Marking Device FDD9407 FDD9407-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient th...