FCPF400N80ZCN

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF400N80ZCN ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.4Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC-DC Power Supply ·LED Lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 14 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 36 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.47 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF400N80ZCN ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 800 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1.1mA 2.5 RDS(on) Drain-Source On-Resistance VGS=10V; ID=5.5A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V VDS=800V; VGS= 0V IDSS Drain-Source Leakage Current VDS=640V; VGS= 0V;Tj=125℃ VSD Diode forward on voltage ISD =11A, VGS = 0 V V 4.5 V 0.4 Ω ±10 μA 25 μA 250 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a...