FDH45N50F

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDH45N50F ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 45 28.4 180 PD Total Dissipation @TC=25℃ 625 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.2 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDH45N50F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= ±30V; ID=0.25mA 3.0 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=22.5A 105 120 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±30V;VDS= 0V Drain-Source Leakage Current VDS= 500V; VGS= 0V;Tj=25℃ VDS= 400V; VGS= 0V; Tj=125℃ Diode forward voltage ISD=45A, VGS = 0 V ±0.1 μA 25 250 μA 1.4 V ...