FMR19N60ES

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMR19N60ES ·FEATURES ·With TO-3PML packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 76 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMR19N60ES ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.25mA 3.7 4.7 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9.5A 310 365 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±30V;VDS= 0V VDS= 600V; VGS= 0V;Tc=25℃ VDS= 480V; VGS= 0V;Tc=125℃ ...