N-CHANNEL SILICON POWER MOSFET
FMW30N60S1HF
http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhan...
Description
FMW30N60S1HF
http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound
Applications For switching
Outline Drawings [mm]
TO-247
①② ③
①② ③
CONNECTION ① GATE ② DRAIN ③ SOURCE
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Parameter Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
ID
Pulsed Drain Current Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
IDP VGS
IAR
EAS
dVDS/dt dV/dt -di/dt
Maximum Power Dissipation
PD
Tch
Operating and Storage Temperature range
Tstg
Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C.
Characteristics
600 600 ±30 ±19 ±90 ±30
6.6
849.2
50 12 100 2.5 220 150 -55 to +150
Electrical Characteristics at TC=25°C (unless otherwise specified) Static Ratings
Parameter
Symbol Conditions
Drain-Source Breakdown Voltage Gate Threshold Voltage
BVDSS VGS(th)
Zero Gate Voltage Drain Current...
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