isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
INCHANGE Semiconductor
FQP10N20C
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
9.5 6.0
38
PD
Total Dissipation
72
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.74 62.5
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FQP10N20C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.75A
0.29 0.36
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 200V; VGS= 0V;@Tc=25℃ VDS= 160V; VGS= 0V Tc=125℃
ISD=9.5A, VGS = 0...