isc N-Channel MOSFET Transistor
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minim...
isc N-Channel MOSFET
Transistor
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
FQP13N10L
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
12.8 9.05
51.2
PD
Total Dissipation
65
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.31 62.5
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FQP13N10L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
IDSS
Drain-Source Leakage Current
VSDF
Diode forward voltage
VDS=±20V; ID=0.25mA
VGS= 10V; ID=6.4A VGS= 5V; ID=6.4A
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V; VDS= 80V; VGS= 0V;
ISD=12.8A, VGS = 0 V
100
V
1
2
V
142 180 158 200
mΩ
±0.1 μA
1 10
μA
1.5
V
NOTICE： ISC reserves the rights to make c...
