Power MOSFET
PD- 94853
SMPS MOSFET IRFP460APbF
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l Hi...
Description
PD- 94853
SMPS MOSFET IRFP460APbF
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free
Benefits l Low Gate Charge Qg results in Simple
Drive Requirement l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness l Fully Characterized Capacitance and
Avalanche Voltage and Current l Effective Coss specified ( See AN1001)
HEXFET® Power MOSFET
VDSS Rds(on) max ID
500V
0.27Ω
20A
TO-247AC G D S
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max. 20 13 80 280 2.2 ± 30 3.8
-55 to + 150
300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A
W W/°C
V V/ns
°C
Typical SMPS Topologies: l Full Bridge l PFC Boost
Notes through
are on page 8
Document Number: 91234
11/18/03
www.vishay.com 1
IRFP460APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A
VGS(th...
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