IPA80R310CE

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA80R310CE ·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 16.7 10.6 51 PD Total Dissipation 35 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.6 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA80R310CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.1 3.9 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=11A 250 310 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 800V; VGS= 0V;@Tc=25℃ Tc=150℃ ISD=16.7A, VGS = 0 V ±0.1 μA 20 250 μA 1.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time withou...