IPA083N10N5

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 44 32 176 PD Total Dissipation @TC=25℃ 36 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.1 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 100 V VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.05mA 2.2 3.8 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=44A 7.2 8.3 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS= 100V; VGS= 0V;Tj=25℃ Tj=125℃ Diode forward voltage ISD=44A, VGS = 0 V ±0.1 μA 1 100 μA 1.2 V NOTICE： ISC reserves the...